IGBT transistors are critical components in modern power electronics, enabling efficient control of high-power AC and DC circuits. Selecting the appropriate IGBT is paramount for ensuring the reliability, performance, and safety of various industrial applications, from motor drives to power supplies. Understanding key specifications and features will guide you to the best choice for your specific needs.
- High Voltage Handling: Designed to withstand collector-emitter voltage (VCES) up to 600V, making it ideal for high-voltage power applications.
- High Current Capacity: Capable of handling collector current (IC) up to 40A, ensuring robust performance in high-current power switching circuits.
- Advanced IGBT Technology: Utilizes Insulated Gate Bipolar Transistor (IGBT) technology for efficient power switching, combining the advantages of both MOSFETs and bipolar transistors.
- Durable TO-247 Package: Constructed in a robust TO-247 package, offering excellent thermal management and long-term reliability in demanding power applications.
- Versatile Applications: Suitable for a wide range of applications including motor drives, inverters, power supplies, and other high-power switching circuits.
- Part Number: SGH80N60UFD
- Part Type: IGBT
- Collector-emitter voltage (VCES):600 V
- Collector current (IC): 80A
- In case the quality is affected during shipping (it does not work properly), please choose refund or exchange, Sincerely apologize for you in advance
- PACKAGE CONTENTS: Set of 10 pieces G60T60AN3H IGBT integrated circuit chips for replacement or project needs
- COMPONENT TYPE: Large tube IGBT (Insulated Gate Bipolar Transistor) chips designed for power switching applications
- PACKAGE STYLE: TO-3P package format providing reliable mounting and heat dissipation for high-power circuits
- PART NUMBER: G60T60AN3H IC, also identified as CRG60T60AN3H for cross-reference compatibility
- BRAND: Manufactured by Hailue for consistent quality and performance in electronic circuit applications
- The CRG60T60AN3H is a high-performance Insulated Gate Bipolar Transistor designed for efficient power switching in medium- and high-power applications. It combines the low conduction losses of a bipolar transistor with the voltage-controlled gate of a...
- drives, power supplies, industrial automation equipment. The CRG60T60AN3H typically features a rugged silicon structure that enhances thermal stability and reliability under high current and voltage stress. Its low gate charge and optimized
- switching characteristics help reduce system losses and electromagnetic interference. The CRG60T60AN3H enables designers to achieve higher efficiency, compact system design, long operational lifetime in demanding power electronics applications.
- “If you have any issues with the product or delivery, please feel free to contact us
- Transistors
- 1PCS 300A 1200V CM300DY-24H Power Transistor IGBT Power Module Electric Power Electronic Components Electronics Parts
- Type of IGBT Channel: N-Channel
- Maximum Collector-Emitter Voltage |Vce|, V: 600
- Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
- Maximum Collector Current |Ic|, A: 60
- Package: TO-247
- EEEEE 10 Values 70 Pc MOSFET transistor kit with Normal NMOS, Logic, High current and PMOS
- NMOS IRFZ44N IRF530N IRF540N IRF640N IRF740 IRF840
- Logic Level RFP30N06LE 2N7000
- High Current IRF3205
- PMOS IRF9540
- Positive Temperaure Co-efficient for easy parallel operating.
- High current capability.
- High input impedance.
- Low saturation voltage,Maximum Junction Temperatur.
- NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability. We do not provide technical support, please familiarize yourself with the parameters and performance of the purchased products in advance. Sincerely...
- Part Number:FGH40N60SFD
- Part Type:IGBT
- Collector-emitter voltage (VCES):600 V
- Collector current (IC): 40 A
- In case the quality is affected during shipping (it does not work properly), please choose refund or exchange, Sincerely apologize for you in advance
- Quantity: 2 Pcs NGD8201AG TO-252 Ignition N.Channel IC Chip
- Encapsulation: TO-252, Material: Electrical Components
- Size: 10.5 mm x 6.5 mm x 2.2 mm, Color: See Pictures
- NGD8201AG Chip Is Widely Used In Various Electronic Devices, Suitable For Smart Phones, Tablets, Smart Home Devices And Other Electronic Products
- NOTE: Kindly Compare Your Original Item With The Photos Provided For The Listing To Make Sure That You Are Purchasing The Correct Part. We Don't Provide Technical Assistance Please Make Sure You Are Familiar With The Product Before Purchasing. Apologize...
- Transistor Type: IGBT (Insulated Gate Bipolar Transistor), offering high-speed power switching capability.
- Transistor Specification: Capable of handling Collector Emitter Voltage (VCES) up to 1200V, Dissipation Power (PD) up to 125W, and Collector Current (IC) of 25A at Collector Temperature (Tc) of 100°C.
- Recovery Time: Features Reverse Recovery Time (trr) of 300 ns.
- Application: Designed for efficient power management, commonly used in power supplies, and motor control systems.
- Package: Comes in a TO-3P package, with each pack containing 5 units, ensuring ESD safety and long shelf life.
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Last update on 2026-08-31 / Affiliate links / Images from Amazon Product Advertising API
How to Choose the Best IGBT Transistors
Understanding IGBT Technology
Insulated Gate Bipolar Transistors (IGBTs) combine the high input impedance of MOSFETs with the high current and low saturation voltage of bipolar transistors. This makes them ideal for switching applications where high voltage and current handling are required. They are commonly used in variable frequency drives (VFDs), uninterruptible power supplies (UPS), electric vehicle powertrains, and induction heating systems.
Key Specifications to Consider
- Voltage Rating (Vces): This is the maximum collector-emitter voltage the IGBT can withstand when it's off. Ensure this rating significantly exceeds your operating voltage to prevent breakdown.
- Current Rating (Ic): The continuous collector current the device can handle. Consider both continuous and pulsed current requirements for your application.
- Power Dissipation (Pd): The maximum power the IGBT can dissipate as heat. Proper thermal management is crucial, so choose a device with adequate dissipation capabilities or plan for effective heatsinking.
- Switching Speed: This refers to how quickly the IGBT can turn on and off. Faster switching speeds are beneficial for higher frequency applications, reducing switching losses.
- Package Type: IGBTs come in various packages, including through-hole, surface-mount, and module types. The package influences thermal performance, mounting ease, and current handling.
Application-Specific Selection
The intended application heavily influences the choice of IGBT. For motor control, look for devices optimized for low switching losses and high current capability. For high-frequency switching power supplies, prioritize fast switching speeds and low on-state losses. For high-power industrial equipment, module-type IGBTs often provide superior thermal performance and easier integration.
Thermal Management and Reliability
Effective heat dissipation is critical for IGBT longevity and performance. Consider the thermal resistance of the IGBT package and the necessity of a heatsink, thermal interface material (TIM), and possibly forced air or liquid cooling. Always derate components to ensure operation within safe thermal limits, especially under varying load conditions.
Comparison Tips
When comparing different IGBTs, pay close attention to the trade-offs between voltage, current, switching speed, and cost. A higher voltage rating often comes with increased on-state resistance, leading to higher conduction losses. Conversely, faster switching devices may have higher switching losses at lower frequencies. Review datasheets carefully for performance curves and application notes to understand how a specific device behaves under your expected operating conditions.
