Looking for the best IGBT Transistors?
Discover now our comparison of the best IGBT Transistors. It is never easy to choose from the wide range of offers. On the market, you will find an incalculable number of models, all at different prices. And as you will discover, the best IGBT Transistors are not always the ones at the highest prices! Many criteria are used, and they make the richness and relevance of this comparison.
To help you make the best choice among the hundreds of products available, we have decided to offer you a comparison of the IGBT Transistors in order to find the best quality/price ratio. In this ranking, you will find products listed according to their price, but also their characteristics and the opinions of other customers. Also discover our comparisons by categories. You won’t have to choose your products at random anymore.
- NPT Trench Technology, Positive temperature coefficient.
- Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C.
- Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C.
- Extremely enhanced avalanche capability.
- NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability
- Type of IGBT Channel: N-Channel
- Maximum Collector-Emitter Voltage |Vce|, V: 600
- Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
- Maximum Collector Current |Ic|, A: 60
- Package: TO-247
- Item Condition: Brand New
- 12 Months Quality Warranty
- Actual item as shown in photos
- Random send the part number
- NOTE: Kindly compare your original item with the photos provided for the listing to make sure that you are purchasing the correct part. we don't provide technical assistance please make sure you are familiar with the product before purchasing. apologize in advance.
- 1 PCS K50T60 IKW50N60T 50N60 TO-247 50A 600V IGBT transistor
- Transistor Type: IGBT (Insulated Gate Bipolar Transistor), offering high-speed power switching capability.
- Transistor Specification: Capable of handling Collector Emitter Voltage (VCES) up to 1200V, Dissipation Power (PD) up to 125W, and Collector Current (IC) of 25A at Collector Temperature (Tc) of 100°C.
- Recovery Time: Features Reverse Recovery Time (trr) of 300 ns.
- Application: Designed for efficient power management, commonly used in power supplies, and motor control systems.
- Package: Comes in a TO-3P package, with each pack containing 5 units, ensuring ESD safety and long shelf life.
- 5 Pcs SGH40N60UFD G40N60UFD G40N60 IGBT Transistors 600V 40A 160W TO3P
- 10PCS IHW30N110R3 H30R1103 TO-247 30A 1100V Power IGBT Transistor
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Last update on 2024-05-03 / Affiliate links / Images from Amazon Product Advertising API